to-92l plastic-encapsulate transistors KTA1023 transistor (pnp) features complementary to ktc1027 maximum ratings (t a b =25 unless otherwise noted) symbol parameter value unit v b cbo b collector-base voltage -120 v v b ceo b collector-emitter voltage -120 v v b ebo b emitter-base voltage -5 v i b c b collector current -continuous -0.8 a p b c b collector power dissipation 0.9 w t b j b junction temperature 150 t b stg b storage temperature -55to+150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in t yp max unit collector-base breakdown voltage v b (br)cbo i c =-10 a,i b e b =0 -120 v collector-emitter breakdown voltage v b (br)ceo i c =-10ma,i b b b =0 -120 v emitter-base breakdown voltage v b (br)ebo i e =-1ma,i b c b =0 -5 v collector cut-off current i cbo v cb =-120v,i e =0 -0.1 a emitter cut-off current i ebo v eb =-5v,i c =0 -0.1 a dc current gain h fe v ce =-5v,i c =-100ma 80 240 collector-emitter saturation voltage v ce (sat) i c =-500ma,i b =-50ma -1.0 v base-emitter voltage v be i c =-500ma, v ce =-5v -1.0 v transition frequency f t v ce =-5v, i c b =-100ma 120 mhz collector output capacitance cob v ce =-10v, i e b =0,f=1mhz 40 pf classification of h fe rank o y range 80 - 160 120 - 240 to-92l 1. emitter 2. collecter 3. base 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,jan,2012
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